SI2343CDS-T1-GE3

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

MOSFET P-CH 30V 5.9A SOT23-3

NOVA Part#:

312-2280919-SI2343CDS-T1-GE3

Manufacturer:

Manufacturer Part No:

SI2343CDS-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 30 V 5.9A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SI2343
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	45mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	590 pF @ 15 V
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Other Names	SI2343CDS-T1-GE3CT SI2343CDS-T1-GE3DKR SI2343CDS-T1-GE3TR SI2343CDST1GE3