IMZA65R030M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247
NOVA Part#:
312-2299769-IMZA65R030M1HXKSA1
Manufacturer Part No:
IMZA65R030M1HXKSA1
Standard Package:
30
Technical Datasheet:

Available download format

N-Channel 650 V 53A (Tc) 197W (Tc) Through Hole PG-TO247-4-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
RoHS 1
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package PG-TO247-4-3
TechnologySiCFET (Silicon Carbide)
SeriesCoolSiC™
Current - Continuous Drain (Id) @ 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs 42mOhm @ 29.5A, 18V
Vgs(th) (Max) @ Id 5.7V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 18 V
FET Feature-
Package / CaseTO-247-4
Vgs (Max)+20V, -2V
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds 1643 pF @ 400 V
Power Dissipation (Max) 197W (Tc)
Other Names448-IMZA65R030M1HXKSA1

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