E3M0065090D

SICFET N-CH 900V 35A TO247-3
NOVA Part#:
312-2345121-E3M0065090D
Manufacturer:
Manufacturer Part No:
E3M0065090D
Standard Package:
30
Technical Datasheet:

Available download format

N-Channel 900 V 35A (Tc) 125W (Tc) Through Hole TO-247-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerWolfspeed, Inc.
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247-3
Base Product Number E3M0065090
TechnologySiCFET (Silicon Carbide)
SeriesE-Series, Automotive
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs 84.5mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 30.4 nC @ 15 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)+18V, -8V
FET TypeN-Channel
Drain to Source Voltage (Vdss)900 V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 600 V
Power Dissipation (Max) 125W (Tc)

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