SI1317DL-T1-GE3

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MOSFET P-CH 20V 1.4A SOT323

NOVA Part#:

312-2282009-SI1317DL-T1-GE3

Manufacturer:

Manufacturer Part No:

SI1317DL-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 20 V 1.4A (Tc) 500mW (Tc) Surface Mount SC-70-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-3
Base Product Number	SI1317
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	150mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 4.5 V
FET Feature	-
Package / Case	SC-70, SOT-323
Vgs (Max)	±8V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	272 pF @ 10 V
Power Dissipation (Max)	500mW (Tc)
Other Names	SI1317DL-T1-GE3DKR SI1317DL-T1-GE3TR SI1317DL-T1-GE3CT SI1317DL-T1-GE3-ND