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N-Channel 60 V 45.6A (Ta), 2.4A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® SO-8DC | |
Base Product Number | SIDR626 | |
Technology | MOSFET (Metal Oxide) | |
Series | TrenchFET® Gen IV | |
Current - Continuous Drain (Id) @ 25°C | 45.6A (Ta), 2.4A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V | |
FET Feature | - | |
Package / Case | PowerPAK® SO-8 | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 60 V | |
Input Capacitance (Ciss) (Max) @ Vds | 5900 pF @ 30 V | |
Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) | |
Other Names | 742-SIDR626LDP-T1-RE3DKR 742-SIDR626LDP-T1-RE3TR 742-SIDR626LDP-T1-RE3CT |
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