SI1062X-T1-GE3

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MOSFET N-CH 20V SC89-3

NOVA Part#:

312-2281323-SI1062X-T1-GE3

Manufacturer:

Manufacturer Part No:

SI1062X-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

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N-Channel 20 V 530mA (Ta) 220mW (Ta) Surface Mount SC-89-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-3
Base Product Number	SI1062
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.7 nC @ 8 V
FET Feature	-
Package / Case	SC-89, SOT-490
Vgs (Max)	±8V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	43 pF @ 10 V
Power Dissipation (Max)	220mW (Ta)
Other Names	SI1062XT1GE3 SI1062X-T1-GE3TR SI1062X-T1-GE3CT SI1062X-T1-GE3DKR