BSZ160N10NS3GATMA1

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MOSFET N-CH 100V 8A/40A 8TSDSON

NOVA Part#:

312-2282672-BSZ160N10NS3GATMA1

Manufacturer:

Manufacturer Part No:

BSZ160N10NS3GATMA1

Standard Package:

5,000

Technical Datasheet:

Available download format

N-Channel 100 V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Base Product Number	BSZ160
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
FET Feature	-
Package / Case	8-PowerTDFN
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 50 V
Power Dissipation (Max)	2.1W (Ta), 63W (Tc)
Other Names	BSZ160N10NS3 GINTR-ND BSZ160N10NS3 G-ND BSZ160N10NS3 GINDKR-ND BSZ160N10NS3GATMA1CT BSZ160N10NS3 GINCT-ND BSZ160N10NS3G BSZ160N10NS3 GINDKR SP000482390 BSZ160N10NS3 GINTR BSZ160N10NS3 G BSZ160N10NS3GATMA1DKR BSZ160N10NS3GATMA1TR BSZ160N10NS3 GINCT