SI2371EDS-T1-GE3

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MOSFET P-CH 30V 4.8A SOT-23

NOVA Part#:

312-2281505-SI2371EDS-T1-GE3

Manufacturer:

Manufacturer Part No:

SI2371EDS-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 30 V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Base Product Number	SI2371
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	45mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±12V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Other Names	SI2371EDS-T1-GE3DKR SI2371EDS-T1-GE3TR SI2371EDS-T1-GE3CT