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SIHB100N60E-GE3
MOSFET N-CH 600V 30A D2PAK
NOVA Part#:
312-2265352-SIHB100N60E-GE3
Manufacturer:
Manufacturer Part No:
SIHB100N60E-GE3
Standard Package:
1,000
Technical Datasheet:
Available download format
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N-Channel 600 V 30A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D²PAK (TO-263) | |
| Base Product Number | SIHB100 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | E | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Vgs (Max) | ±30V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1851 pF @ 100 V | |
| Power Dissipation (Max) | 208W (Tc) |
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