SI2304BDS-T1-GE3

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MOSFET N-CH 30V 2.6A SOT23-3

NOVA Part#:

312-2281879-SI2304BDS-T1-GE3

Manufacturer:

Manufacturer Part No:

SI2304BDS-T1-GE3

Standard Package:

3,000

Technical Datasheet:

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N-Channel 30 V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SI2304
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	70mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 5 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 15 V
Power Dissipation (Max)	750mW (Ta)
Other Names	SI2304BDS-T1-GE3CT SI2304BDS-T1-GE3DKR SI2304BDST1GE3 SI2304BDS-T1-GE3TR