FCP125N60E

POWER FIELD-EFFECT TRANSISTOR, N
NOVA Part#:
312-2276152-FCP125N60E
Manufacturer Part No:
FCP125N60E
Standard Package:
1
Technical Datasheet:

Available download format

N-Channel 600 V 29A (Tc) 278W (Tc) Through Hole TO-220-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerFairchild Semiconductor
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-220-3
Base Product Number FCP125
TechnologyMOSFET (Metal Oxide)
SeriesSuperFET® II
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 125mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
FET Feature-
Package / CaseTO-220-3
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds 2990 pF @ 380 V
Power Dissipation (Max) 278W (Tc)
Other Names2156-FCP125N60E
ONSFSCFCP125N60E

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