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P-Channel 16 V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Diodes Incorporated | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | X2-DFN2015-3 | |
Base Product Number | DMG3415 | |
Technology | MOSFET (Metal Oxide) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 39mOhm @ 4A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | |
FET Feature | - | |
Package / Case | 3-XDFN | |
Vgs (Max) | ±8V | |
FET Type | P-Channel | |
Drain to Source Voltage (Vdss) | 16 V | |
Input Capacitance (Ciss) (Max) @ Vds | 282 pF @ 10 V | |
Power Dissipation (Max) | 650mW (Ta) | |
Other Names | DMG3415UFY4Q-7DIDKR DMG3415UFY4Q-7DICT DMG3415UFY4Q-7DITR |
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