SI3460BDV-T1-E3

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MOSFET N-CH 20V 8A 6TSOP

NOVA Part#:

312-2265039-SI3460BDV-T1-E3

Manufacturer:

Manufacturer Part No:

SI3460BDV-T1-E3

Standard Package:

3,000

Technical Datasheet:

Available download format

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N-Channel 20 V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Base Product Number	SI3460
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	27mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 8 V
FET Feature	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Vgs (Max)	±8V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 10 V
Power Dissipation (Max)	2W (Ta), 3.5W (Tc)
Other Names	SI3460BDVT1E3 SI3460BDV-T1-E3CT SI3460BDV-T1-E3TR SI3460BDV-T1-E3DKR