SI4463DY

P-CHANNEL MOSFET
NOVA Part#:
312-2267445-SI4463DY
Manufacturer Part No:
SI4463DY
Standard Package:
2,500
Technical Datasheet:

Available download format

P-Channel 20 V 11.5A (Ta) 1W (Ta) Surface Mount 8-SOIC

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerFairchild Semiconductor
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 8-SOIC
TechnologyMOSFET (Metal Oxide)
SeriesPowerTrench®
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs 12mOhm @ 11.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 4.5 V
FET Feature-
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs (Max)±12V
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds 4481 pF @ 10 V
Power Dissipation (Max) 1W (Ta)
Other Names2156-SI4463DY
FAIFSCSI4463DY

In stock Please contact us

Not the price you want? Fill the forms and we'll contact you ASAP.