IPD80R1K0CEATMA1

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MOSFET N-CH 800V 5.7A TO252-3

NOVA Part#:

312-2290548-IPD80R1K0CEATMA1

Manufacturer:

Manufacturer Part No:

IPD80R1K0CEATMA1

Standard Package:

2,500

Technical Datasheet:

Available download format

N-Channel 800 V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Base Product Number	IPD80R1
Technology	MOSFET (Metal Oxide)
Series	CoolMOS™ CE
Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	800 V
Input Capacitance (Ciss) (Max) @ Vds	785 pF @ 100 V
Power Dissipation (Max)	83W (Tc)
Other Names	IPD80R1K0CEATMA1-ND IPD80R1K0CEATMA1CT SP001130974 IPD80R1K0CEATMA1DKR IPD80R1K0CEATMA1TR