SI4435FDY-T1-GE3

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MOSFET P-CH 30V 12.6A 8SOIC

NOVA Part#:

312-2282029-SI4435FDY-T1-GE3

Manufacturer:

Manufacturer Part No:

SI4435FDY-T1-GE3

Standard Package:

2,500

Technical Datasheet:

Available download format

P-Channel 30 V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Base Product Number	SI4435
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen III
Current - Continuous Drain (Id) @ 25°C	12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
FET Feature	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Vgs (Max)	±20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 15 V
Power Dissipation (Max)	4.8W (Tc)
Other Names	SI4435FDY-T1-GE3DKR SI4435FDY-T1-GE3TR SI4435FDY-T1-GE3CT SI4435FDY-T1-GE3-ND