FQD1N80TM

MOSFET N-CH 800V 1A DPAK
NOVA Part#:
312-2274144-FQD1N80TM
Manufacturer:
Manufacturer Part No:
FQD1N80TM
Standard Package:
2,500
Technical Datasheet:

Available download format

N-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA

More Information
CategoryTransistors - FETs, MOSFETs - Single
Manufactureronsemi
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package TO-252AA
Base Product Number FQD1N80
TechnologyMOSFET (Metal Oxide)
SeriesQFET®
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
FET Feature-
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Other Names2156-FQD1N80TM-OS
FQD1N80TM-ND
ONSONSFQD1N80TM
FQD1N80TMDKR
FQD1N80TMCT
FQD1N80TMTR

In stock Please contact us

Not the price you want? Fill the forms and we'll contact you ASAP.