SI2329DS-T1-GE3

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MOSFET P-CH 8V 6A SOT23-3

NOVA Part#:

312-2263502-SI2329DS-T1-GE3

Manufacturer:

Manufacturer Part No:

SI2329DS-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 8 V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SI2329
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 4.5 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±5V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	8 V
Input Capacitance (Ciss) (Max) @ Vds	1485 pF @ 4 V
Power Dissipation (Max)	2.5W (Tc)
Other Names	SI2329DS-T1-GE3-ND SI2329DS-T1-GE3CT SI2329DS-T1-GE3TR SI2329DS-T1-GE3DKR