SIRA10DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8
NOVA Part#:
312-2287684-SIRA10DP-T1-GE3
Manufacturer:
Manufacturer Part No:
SIRA10DP-T1-GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

N-Channel 30 V 60A (Tc) 5W (Ta), 40W (Tc) Surface Mount PowerPAK® SO-8

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package PowerPAK® SO-8
Base Product Number SIRA10
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
FET Feature-
Package / CasePowerPAK® SO-8
Vgs (Max)+20V, -16V
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds 2425 pF @ 15 V
Power Dissipation (Max) 5W (Ta), 40W (Tc)
Other NamesSIRA10DP-T1-GE3CT
SIRA10DPT1GE3
SIRA10DP-T1-GE3TR
SIRA10DP-T1-GE3DKR

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