SIR662DP-T1-GE3

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MOSFET N-CH 60V 60A PPAK SO-8

NOVA Part#:

312-2281150-SIR662DP-T1-GE3

Manufacturer:

Manufacturer Part No:

SIR662DP-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

Altium

Eagle

OrCad

PADS

KiCad

N-Channel 60 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Base Product Number	SIR662
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	4365 pF @ 30 V
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Other Names	SIR662DPDKR SIR662DPDKR-ND SIR662DP-T1-GE3CT SIR662DPT1GE3 SIR662DPCT SIR662DP SIR662DPTR SIR662DP-T1-GE3DKR SIR662DP-T1-GE3TR SIR662DPTR-ND SIR662DPCT-ND