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N-Channel 80 V 120A (Tc) 150W (Tc) Through Hole TO-220
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Operating Temperature | 175°C | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220 | |
Technology | MOSFET (Metal Oxide) | |
Series | U-MOSX-H | |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 5.3mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 700µA | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-220-3 | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 80 V | |
Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 40 V | |
Power Dissipation (Max) | 150W (Tc) | |
Other Names | 264-TK5R3E08QMS1X TK5R3E08QM,S1X(S 264-TK5R3E08QM,S1X-ND 264-TK5R3E08QM,S1X |
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