SCTH70N120G2V-7

SILICON CARBIDE POWER MOSFET 120
NOVA Part#:
312-2297764-SCTH70N120G2V-7
Manufacturer:
Manufacturer Part No:
SCTH70N120G2V-7
Standard Package:
1,000
Technical Datasheet:

Available download format

N-Channel 1200 V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package H2PAK-7
TechnologySiCFET (Silicon Carbide)
Series-
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 18 V
FET Feature-
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Vgs (Max)+22V, -10V
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds 3540 pF @ 800 V
Power Dissipation (Max) 469W (Tc)
Other Names497-SCTH70N120G2V-7DKR
497-SCTH70N120G2V-7TR
497-SCTH70N120G2V-7CT

In stock Please contact us

Not the price you want? Fill the forms and we'll contact you ASAP.