SI1021R-T1-GE3

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MOSFET P-CH 60V 190MA SC75A

NOVA Part#:

312-2263364-SI1021R-T1-GE3

Manufacturer:

Manufacturer Part No:

SI1021R-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 60 V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-75A
Base Product Number	SI1021
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 15 V
FET Feature	-
Package / Case	SC-75, SOT-416
Vgs (Max)	±20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	23 pF @ 25 V
Power Dissipation (Max)	250mW (Ta)
Other Names	SI1021R-T1-GE3DKR SI1021RT1GE3 SI1021R-T1-GE3CT SI1021R-T1-GE3TR