SI4491EDY-T1-GE3

MOSFET P-CH 30V 17.3A 8SO
NOVA Part#:
312-2285624-SI4491EDY-T1-GE3
Manufacturer:
Manufacturer Part No:
SI4491EDY-T1-GE3
Standard Package:
2,500
Technical Datasheet:

Available download format

P-Channel 30 V 17.3A (Ta) 3.1W (Ta), 6.9W (Tc) Surface Mount 8-SOIC

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 8-SOIC
Base Product Number SI4491
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V
FET Feature-
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs (Max)±25V
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds 4620 pF @ 15 V
Power Dissipation (Max) 3.1W (Ta), 6.9W (Tc)
Other NamesSI4491EDY-T1-GE3DKR
SI4491EDY-T1-GE3TR
SI4491EDY-T1-GE3CT
SI4491EDY-T1-GE3-ND

In stock Please contact us

Not the price you want? Fill the forms and we'll contact you ASAP.

We found other products you might like!