IRLD120PBF

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MOSFET N-CH 100V 1.3A 4DIP

NOVA Part#:

312-2288790-IRLD120PBF

Manufacturer:

Manufacturer Part No:

IRLD120PBF

Standard Package:

100

Technical Datasheet:

Available download format

N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-HVMDIP
Base Product Number	IRLD120
Technology	MOSFET (Metal Oxide)
Series	-
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Max) @ Id, Vgs	270mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 5 V
FET Feature	-
Package / Case	4-DIP (0.300", 7.62mm)
Vgs (Max)	±10V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
Power Dissipation (Max)	1.3W (Ta)
Other Names	*IRLD120PBF