SI2366DS-T1-GE3

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MOSFET N-CH 30V 5.8A SOT23-3

NOVA Part#:

312-2284853-SI2366DS-T1-GE3

Manufacturer:

Manufacturer Part No:

SI2366DS-T1-GE3

Standard Package:

3,000

Technical Datasheet:

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N-Channel 30 V 5.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SI2366
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	335 pF @ 15 V
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Other Names	SI2366DS-T1-GE3DKR SI2366DS-T1-GE3CT SI2366DS-T1-GE3TR SI2366DS-T1-GE3-ND