SIS128LDN-T1-GE3

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MOSFET N-CH 80V 10.2A/33.7A PPAK

NOVA Part#:

312-2285447-SIS128LDN-T1-GE3

Manufacturer:

Manufacturer Part No:

SIS128LDN-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 80 V 10.2A (Ta), 33.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Base Product Number	SIS128
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C	10.2A (Ta), 33.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	15.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® 1212-8
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	1250 pF @ 40 V
Power Dissipation (Max)	3.6W (Ta), 39W (Tc)
Other Names	SIS128LDN-T1-GE3DKR SIS128LDN-T1-GE3TR SIS128LDN-T1-GE3CT