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N-Channel 100 V 3.2A (Ta), 20A (Tc) 2.8W (Ta), 29W (Tc) Surface Mount 8-PQFN (3x3)
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-PQFN (3x3) | |
Base Product Number | IRFHM3911 | |
Technology | MOSFET (Metal Oxide) | |
Series | HEXFET® | |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta), 20A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 115mOhm @ 6.3A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 35µA | |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
FET Feature | - | |
Package / Case | 8-PowerTDFN | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 100 V | |
Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 50 V | |
Power Dissipation (Max) | 2.8W (Ta), 29W (Tc) | |
Other Names | IRFHM3911TRPBF-ND 448-IRFHM3911TRPBFDKR 448-IRFHM3911TRPBFTR SP001575850 448-IRFHM3911TRPBFCT |
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