SQJ872EP-T1_GE3

MOSFET N-CH 150V 24.5A PPAK SO-8
NOVA Part#:
312-2280969-SQJ872EP-T1_GE3
Manufacturer:
Manufacturer Part No:
SQJ872EP-T1_GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

N-Channel 150 V 24.5A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8 Dual

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJ872
TechnologyMOSFET (Metal Oxide)
SeriesAutomotive, AEC-Q101, TrenchFET®
Current - Continuous Drain (Id) @ 25°C 24.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs 35.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
FET Feature-
Package / CasePowerPAK® SO-8 Dual
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds 1045 pF @ 25 V
Power Dissipation (Max) 55W (Tc)
Other NamesSQJ872EP-T1_GE3DKR
SQJ872EP-T1_GE3CT
SQJ872EP-T1_GE3TR

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