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N-Channel 60 V 26A (Tc) 610mW (Ta), 61W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 175°C | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-TSON Advance (3.1x3.1) | |
Base Product Number | TPN11006 | |
Technology | MOSFET (Metal Oxide) | |
Series | U-MOSIX-H | |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 11.4mOhm @ 13A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 200µA | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
FET Feature | - | |
Package / Case | 8-PowerVDFN | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 60 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1625 pF @ 30 V | |
Power Dissipation (Max) | 610mW (Ta), 61W (Tc) | |
Other Names | TPN11006PL,LQ(S 264-TPN11006PLLQCT 264-TPN11006PLLQTR 264-TPN11006PLLQDKR |
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