SIS434DN-T1-GE3

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MOSFET N-CH 40V 35A PPAK 1212-8

NOVA Part#:

312-2285589-SIS434DN-T1-GE3

Manufacturer:

Manufacturer Part No:

SIS434DN-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

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N-Channel 40 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Base Product Number	SIS434
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.6mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® 1212-8
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	1530 pF @ 20 V
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Other Names	SIS434DN-T1-GE3DKR SIS434DN-T1-GE3TR SIS434DN-T1-GE3CT SIS434DNT1GE3 SIS434DN-T1-GE3-ND