SIA106DJ-T1-GE3

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MOSFET N-CH 60V 10A/12A PPAK

NOVA Part#:

312-2290220-SIA106DJ-T1-GE3

Manufacturer:

Manufacturer Part No:

SIA106DJ-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

N-Channel 60 V 10A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6
Base Product Number	SIA106
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.5 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SC-70-6
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 30 V
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Other Names	SIA106DJ-T1-GE3CT SIA106DJ-T1-GE3TR SIA106DJ-T1-GE3DKR