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IPD082N10N3GATMA1
MOSFET N-CH 100V 80A TO252-3
NOVA Part#:
312-2282067-IPD082N10N3GATMA1
Manufacturer:
Manufacturer Part No:
IPD082N10N3GATMA1
Standard Package:
2,500
Technical Datasheet:
Available download format
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N-Channel 100 V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Base Product Number | IPD082 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 73A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA | |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V | |
| Power Dissipation (Max) | 125W (Tc) | |
| Other Names | IPD082N10N3GATMA1-ND IPD082N10N3GATMA1TR SP001127824 IPD082N10N3GATMA1CT IPD082N10N3GATMA1DKR |
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