SIR165DP-T1-GE3

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MOSFET P-CH 30V 60A PPAK SO-8

NOVA Part#:

312-2288066-SIR165DP-T1-GE3

Manufacturer:

Manufacturer Part No:

SIR165DP-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 30 V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Base Product Number	SIR165
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen III
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	138 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8
Vgs (Max)	±20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	4930 pF @ 15 V
Power Dissipation (Max)	69.4W (Tc)
Other Names	SIR165DP-T1-GE3CT SIR165DP-T1-GE3TR SIR165DP-T1-GE3DKR