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SIHD1K4N60E-GE3
MOSFET N-CH 600V 4.2A TO252AA
NOVA Part#:
312-2265247-SIHD1K4N60E-GE3
Manufacturer:
Manufacturer Part No:
SIHD1K4N60E-GE3
Standard Package:
2,000
Technical Datasheet:
Available download format
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N-Channel 600 V 4.2A (Tc) 63W (Tc) Surface Mount D-Pak
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D-Pak | |
| Base Product Number | SIHD1 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | E | |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.45Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±30V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 172 pF @ 100 V | |
| Power Dissipation (Max) | 63W (Tc) | |
| Other Names | SIHD1K4N60E-GE3DKR SIHD1K4N60E-GE3DKR-ND SIHD1K4N60E-GE3TR-ND SIHD1K4N60E-GE3DKRINACTIVE SIHD1K4N60E-GE3CT SIHD1K4N60E-GE3CT-ND SIHD1K4N60E-GE3TR SIHD1K4N60E-GE3CTINACTIVE |
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