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P-Channel 60 V 3.1A (Tc) 1.56W (Tc) Surface Mount SOT-23
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Taiwan Semiconductor Corporation | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | SOT-23 | |
Base Product Number | TSM2309 | |
Technology | MOSFET (Metal Oxide) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 190mOhm @ 3A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Vgs (Max) | ±20V | |
FET Type | P-Channel | |
Drain to Source Voltage (Vdss) | 60 V | |
Input Capacitance (Ciss) (Max) @ Vds | 425 pF @ 30 V | |
Power Dissipation (Max) | 1.56W (Tc) | |
Other Names | TSM2309CXRFGTR TSM2309CXRFGCT TSM2309CXRFGDKR TSM2309CX RFGTR-ND TSM2309CX RFGDKR TSM2309CX RFGCT TSM2309CX RFGCT-ND TSM2309CX RFGTR TSM2309CX RFGDKR-ND |
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