SIHD12N50E-GE3

MOSFET N-CH 550V 10.5A DPAK
NOVA Part#:
312-2264425-SIHD12N50E-GE3
Manufacturer:
Manufacturer Part No:
SIHD12N50E-GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

N-Channel 550 V 10.5A (Tc) 114W (Tc) Surface Mount D-Pak

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
Operating Temperature -55°C ~ 150°C (TA)
Mounting TypeSurface Mount
Supplier Device Package D-Pak
Base Product Number SIHD12
TechnologyMOSFET (Metal Oxide)
SeriesE
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
FET Feature-
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)550 V
Input Capacitance (Ciss) (Max) @ Vds 886 pF @ 100 V
Power Dissipation (Max) 114W (Tc)
Other NamesSIHD12N50E-GE3CT
SIHD12N50E-GE3TRINACTIVE
SIHD12N50E-GE3DKR-ND
SIHD12N50E-GE3DKRINACTIVE
SIHD12N50E-GE3DKR
SIHD12N50E-GE3TR-ND
SIHD12N50E-GE3CT-ND
SIHD12N50E-GE3TR

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