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N-Channel 550 V 10.5A (Tc) 114W (Tc) Surface Mount D-Pak
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TA) | |
Mounting Type | Surface Mount | |
Supplier Device Package | D-Pak | |
Base Product Number | SIHD12 | |
Technology | MOSFET (Metal Oxide) | |
Series | E | |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Vgs (Max) | ±30V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 550 V | |
Input Capacitance (Ciss) (Max) @ Vds | 886 pF @ 100 V | |
Power Dissipation (Max) | 114W (Tc) | |
Other Names | SIHD12N50E-GE3CT SIHD12N50E-GE3TRINACTIVE SIHD12N50E-GE3DKR-ND SIHD12N50E-GE3DKRINACTIVE SIHD12N50E-GE3DKR SIHD12N50E-GE3TR-ND SIHD12N50E-GE3CT-ND SIHD12N50E-GE3TR |
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