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N-Channel 100 V 61.8A (Tc) 60W (Tc) Through Hole TO-220F
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | NXP USA Inc. | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220F | |
Base Product Number | PSMN5 | |
Technology | MOSFET (Metal Oxide) | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 61.8A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 5.6mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-220-3 Full Pack, Isolated Tab | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 100 V | |
Input Capacitance (Ciss) (Max) @ Vds | 8061 pF @ 50 V | |
Power Dissipation (Max) | 60W (Tc) | |
Other Names | PSMN5R6100XS127 934066041127 PSMN5R6-100XS127 2156-PSMN5R6-100XS127-NX NEXNXPPSMN5R6-100XS,127 PSMN5R6-100XS,127-ND 568-9496-5 |
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