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N-Channel 100 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO263-3 | |
Base Product Number | IPB042 | |
Technology | MOSFET (Metal Oxide) | |
Series | OptiMOS™ | |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Vgs (Max) | ±20V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 100 V | |
Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V | |
Power Dissipation (Max) | 214W (Tc) | |
Other Names | IPB042N10N3GATMA1TR IPB042N10N3 G-ND IPB042N10N3GATMA1CT IPB042N10N3G IPB042N10N3 GCT-ND IPB042N10N3 GTR-ND IPB042N10N3 GDKR IPB042N10N3GATMA1DKR IPB042N10N3 GDKR-ND IPB042N10N3 GCT SP000446880 IPB042N10N3 G |
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