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SQD25N15-52_GE3
MOSFET N-CH 150V 25A TO252
NOVA Part#:
312-2361484-SQD25N15-52_GE3
Manufacturer:
Manufacturer Part No:
SQD25N15-52_GE3
Standard Package:
2,000
Technical Datasheet:
Available download format
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N-Channel 150 V 25A (Tc) 107W (Tc) Surface Mount TO-252AA
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252AA | |
| Base Product Number | SQD25 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | Automotive, AEC-Q101, TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 150 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V | |
| Power Dissipation (Max) | 107W (Tc) | |
| Other Names | SQD25N15-52-GE3-ND SQD25N15-52_GE3TR SQD25N15-52_GE3DKR SQD25N15-52-GE3 SQD25N15-52_GE3CT SQD25N15-52_GE3-ND |
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