SI3459BDV-T1-E3

MOSFET P-CH 60V 2.9A 6TSOP
NOVA Part#:
312-2290265-SI3459BDV-T1-E3
Manufacturer:
Manufacturer Part No:
SI3459BDV-T1-E3
Standard Package:
3,000
Technical Datasheet:

Available download format

P-Channel 60 V 2.9A (Tc) 3.3W (Tc) Surface Mount 6-TSOP

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 6-TSOP
Base Product Number SI3459
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs 216mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
FET Feature-
Package / CaseSOT-23-6 Thin, TSOT-23-6
Vgs (Max)±20V
FET TypeP-Channel
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V
Power Dissipation (Max) 3.3W (Tc)
Other NamesSI3459BDV-T1-E3CT
SI3459BDV-T1-E3TR
SI3459BDV-T1-E3DKR
SI3459BDV-T1-E3-ND

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