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N-Channel 800 V 5.8A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263)
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | D²PAK (TO-263) | |
Base Product Number | FQB6N80 | |
Technology | MOSFET (Metal Oxide) | |
Series | QFET® | |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 1.95Ohm @ 2.9A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | |
FET Feature | - | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Vgs (Max) | ±30V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 800 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V | |
Power Dissipation (Max) | 3.13W (Ta), 158W (Tc) | |
Other Names | FQB6N80TM-ND FQB6N80TMTR FQB6N80TMDKR FQB6N80TMCT |
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