FQB6N80TM

MOSFET N-CH 800V 5.8A D2PAK
NOVA Part#:
312-2291160-FQB6N80TM
Manufacturer:
Manufacturer Part No:
FQB6N80TM
Standard Package:
800
Technical Datasheet:

Available download format

N-Channel 800 V 5.8A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263)

More Information
CategoryTransistors - FETs, MOSFETs - Single
Manufactureronsemi
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package D²PAK (TO-263)
Base Product Number FQB6N80
TechnologyMOSFET (Metal Oxide)
SeriesQFET®
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
FET Feature-
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 158W (Tc)
Other NamesFQB6N80TM-ND
FQB6N80TMTR
FQB6N80TMDKR
FQB6N80TMCT

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