SCT3120ALGC11

SICFET N-CH 650V 21A TO247N
NOVA Part#:
312-2280546-SCT3120ALGC11
Manufacturer:
Manufacturer Part No:
SCT3120ALGC11
Standard Package:
450
Technical Datasheet:

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N-Channel 650 V 21A (Tc) 103W (Tc) Through Hole TO-247N

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerRohm Semiconductor
RoHS 1
Operating Temperature 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247N
Base Product Number SCT3120
TechnologySiCFET (Silicon Carbide)
Series-
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 18 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)+22V, -4V
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 500 V
Power Dissipation (Max) 103W (Tc)
Other NamesQ12567120

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