SI7137DP-T1-GE3

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MOSFET P-CH 20V 60A PPAK SO-8

NOVA Part#:

312-2279510-SI7137DP-T1-GE3

Manufacturer:

Manufacturer Part No:

SI7137DP-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 20 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Base Product Number	SI7137
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	1.95mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	585 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8
Vgs (Max)	±12V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	20000 pF @ 10 V
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Other Names	SI7137DPT1GE3 SI7137DP-T1-GE3DKR SI7137DP-T1-GE3TR SI7137DP-T1-GE3-ND SI7137DP-T1-GE3CT