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N-Channel 1200 V 13A (Tc) 75W (Tc) Through Hole PG-TO247-4-1
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-4-1 | |
Base Product Number | IMZ120 | |
Technology | SiCFET (Silicon Carbide) | |
Series | CoolSiC™ | |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
Rds On (Max) @ Id, Vgs | 220mOhm @ 4A, 18V | |
Vgs(th) (Max) @ Id | 5.7V @ 1.6mA | |
Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 18 V | |
FET Feature | - | |
Package / Case | TO-247-4 | |
Vgs (Max) | +23V, -7V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 1200 V | |
Input Capacitance (Ciss) (Max) @ Vds | 289 pF @ 800 V | |
Power Dissipation (Max) | 75W (Tc) | |
Other Names | SP001946190 |
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