IMZ120R220M1HXKSA1

SICFET N-CH 1.2KV 13A TO247-4
NOVA Part#:
312-2264675-IMZ120R220M1HXKSA1
Manufacturer Part No:
IMZ120R220M1HXKSA1
Standard Package:
30
Technical Datasheet:

Available download format

N-Channel 1200 V 13A (Tc) 75W (Tc) Through Hole PG-TO247-4-1

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
RoHS 1
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package PG-TO247-4-1
Base Product Number IMZ120
TechnologySiCFET (Silicon Carbide)
SeriesCoolSiC™
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs 220mOhm @ 4A, 18V
Vgs(th) (Max) @ Id 5.7V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 18 V
FET Feature-
Package / CaseTO-247-4
Vgs (Max)+23V, -7V
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds 289 pF @ 800 V
Power Dissipation (Max) 75W (Tc)
Other NamesSP001946190

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