SISS05DN-T1-GE3

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MOSFET P-CH 30V 29.4A/108A PPAK

NOVA Part#:

312-2280747-SISS05DN-T1-GE3

Manufacturer:

Manufacturer Part No:

SISS05DN-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

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P-Channel 30 V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Base Product Number	SISS05
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C	29.4A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® 1212-8S
Vgs (Max)	+16V, -20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	4930 pF @ 15 V
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Other Names	SISS05DN-T1-GE3CT SISS05DN-T1-GE3DKR SISS05DN-T1-GE3TR