NTH4L080N120SC1

SICFET N-CH 1200V 29A TO247-4
NOVA Part#:
312-2264833-NTH4L080N120SC1
Manufacturer:
Manufacturer Part No:
NTH4L080N120SC1
Standard Package:
450
Technical Datasheet:

Available download format

N-Channel 1200 V 29A (Tc) 170W (Tc) Through Hole TO-247-4L

More Information
CategoryTransistors - FETs, MOSFETs - Single
Manufactureronsemi
RoHS 1
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247-4L
Base Product Number NTH4L080
TechnologySiCFET (Silicon Carbide)
Series-
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
FET Feature-
Package / CaseTO-247-4
Vgs (Max)+25V, -15V
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 800 V
Power Dissipation (Max) 170W (Tc)
Other Names488-NTH4L080N120SC1

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