C2M0280120D

SICFET N-CH 1200V 10A TO247-3
NOVA Part#:
312-2289854-C2M0280120D
Manufacturer:
Manufacturer Part No:
C2M0280120D
Standard Package:
30
Technical Datasheet:

Available download format

N-Channel 1200 V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerWolfspeed, Inc.
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247-3
Base Product Number C2M0280120
TechnologySiCFET (Silicon Carbide)
SeriesZ-FET™
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs 370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 20.4 nC @ 20 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)+25V, -10V
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds 259 pF @ 1000 V
Power Dissipation (Max) 62.5W (Tc)

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