SIA427DJ-T1-GE3

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MOSFET P-CH 8V 12A PPAK SC70-6

NOVA Part#:

312-2280699-SIA427DJ-T1-GE3

Manufacturer:

Manufacturer Part No:

SIA427DJ-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

P-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6
Base Product Number	SIA427
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 5 V
FET Feature	-
Package / Case	PowerPAK® SC-70-6
Vgs (Max)	±5V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	8 V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 4 V
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Other Names	SIA427DJ-T1-GE3TR SIA427DJT1GE3 SIA427DJ-T1-GE3CT SIA427DJ-T1-GE3DKR