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SI5457DC-T1-GE3
MOSFET P-CH 20V 6A 1206-8
NOVA Part#:
312-2280763-SI5457DC-T1-GE3
Manufacturer:
Manufacturer Part No:
SI5457DC-T1-GE3
Standard Package:
3,000
Technical Datasheet:
Available download format
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P-Channel 20 V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 1206-8 ChipFET™ | |
| Base Product Number | SI5457 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 4.9A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-SMD, Flat Lead | |
| Vgs (Max) | ±12V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V | |
| Power Dissipation (Max) | 5.7W (Tc) | |
| Other Names | SI5457DC-T1-GE3DKR SI5457DC-T1-GE3CT SI5457DC-T1-GE3TR SI5457DC-T1-GE3-ND |
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